Selected Publications

ICS Publication | MMC Publication | SPT Publication | Bioelectronics Publication | NanoEP Publication | SAM Publication

Title of Publication

Author(s) Name of Journal
Integration of RF MEMS and CMOS IC on Printed Circuit Board for A Compact RF System Application Based on Wafer Transfer Q X Zhang, A B Yue, R Yang, H Y Li, L H Guo, E B Liao, M Tang,  G Q Lo, N Balasubramanian and D L Kwong IEEE Transaction on Electron Devices.  Published in vol. 55, No. 9, September 2008, pages 2484 - 2491.
Silicon Nanopillar Substrates for Enhancing Signal Intensity in DNA Microarrays B Ramana Murthy, J K K Ng (NUS), E S Selamat (NUS), N Balasubramanian and W T Liu (IME/NUS) Biosensors and Bioelectronics.  Published in 24 (2008) pages 723 - 728.
The Nature of Dielectric Breakdown X Li (IME/NTU), C H Tung and K L Pey (NTU) Applied Physics Letters.  Published in 92, 072903 (2008).
A Silicon-on-Glass Single-Pole Double-Throw (SPDT) Switching Circuit Integrated with Silicon-Core Metal-Coated Transmission Line M Tang (NTU/IME), A Q Liu (NTU) and J Oberhammer (Royal Institute of Technology) Journal of  Micromechanics and Microengineering.  Published in 18 (2008) 095024 (9pp).
Fabrication ofThick Germanium-on-Insulator (GeOI) Substrates S Balakumar, K M Hoe,  G Q Lo, R Kumar, N Balasubramanian,  Y L Foo (IMRE), S Tripathy (IMRE)and D L Kwong Journal of Electronic Materials.  Published in Vol. 37, No. 7, July 2008. 
Development and Characterization of High Aspect Ratio Silicon Etch Process for 3D-Microsystems N Ranganathan (IME/NTU), K Prasad (Auckland University of Technology), N Balasubramanian, S C Hwee, K L Pey (NTU) Journal of Micromechanics and Microengineering.  Published pages 1 - 13 in 18 (2008) on 9 June 2008.
Integration of High Aspect Ratio Tapered Silicon Via for Through-Silicon Interconnection N Ranganathan, Liao Ebin, Linn Linn, Lee Wen Sheng Vincent, O K Navas, V Kripesh and  N Balasubramanian ECTC 2008. 27 - 30 May 2008, Florida USA.  Published pages no. 859 - 865.
A Wide Band Scalable and SPICE-Compatiable Model for On-Chip Interconnects Up to 110 GHz Kai Kang, Lan Nan (NUS), Subhash Chander Rustagi, Koen Mouthaan (NUS), Jinglin Shi, Rakesh Kumar, Wen-Yan Yin (Shanghai Jiao Tong University) IEEE Trans. Microwave Theory and Techniques.  Published in vol. 56, No. 4, April 08.
Novel Integration of Metal-Insulator-Metal (MIM) Capacitors Comprising Perovskite-Type Dielectric and Cu Bottom Electrode on Low-Temperature Packaging Substrates E B Liao, T H Choong (NTU), W G Zhu (NTU), KW Teo, P C Lim (IMRE), G Q Lo and D L Kwong  IEEE Electronic Device Letters.  Published in Vol. 29, No. 1, January 2008.
SPICE Compatible Modeling of On-chip Coupled Interconnects Rakesh Kumar (IME), Kai Kang (IME), Subhash C Rustagi (IME), K Mouthaan (NUS) and T K S Wong (NTU) IEE Electronics Letters.  Published on 22 Nov 2007, Vol. 43, No. 24.
A Novel Approach to Fabricate - 120 nm Thick Fully Relaxed Ge-on-Insulator S Balakumar, K M Hoe, W Tang, Y L Foo (IMRE), S Triphathy (IMRE), C H Tung, G Q Lo, N Balasubramanian and D L Kwong  International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan.
Characterisation and Modeling of CMOS On-Chip Coupled Interconnects Rakesh Kumar, Subhash, C Rustagi, Kai Kang; K Mouthaan (NUS) and T K S Wong (NTU) European Solid-State Device Research Conference, 11-13 September 2007.
Strained N-Channel Transistor with Silicon Source and Drain Regions and Embedded Silicon-Germanium as Strain-Transfer-Structure Kah-Wee Ang (NUS/IME), Chih-Hang Tung, N Balasubramanian, Ganesh S Samudra (NUS) and Yee-Chia Yeo (NUS) IEEE Electron Device Letters.  Published in Vol. 28, No. 7, July 2007.
GaAs Metal-Oxide Semiconductor Device with HfO2/TaN Gate Stack and Thermal Nitridation Surface Passivation Fei Gao (NUS/IME), S J Lee (NUS/IME), D Z Chi (IMRE), S Balakumar  and D L Kwong Applied Physics Letters.  Published in 90, 252904 (2007).
Fabrication of Thick SiGe-on-Insulator (si0.2Ge0.8OI) by condensation of SiGe/Si Super Lattice Grown on Silicon-on-Insulator S Balakumar, K M Hoe, G Q Lo, R Kumar, N Balasubramanian, D L Kwong, Y L Foo and S Tripathy (IMRE) Applied Physics Letters.  Published 90, 192113 (2007).
Analysis of Ultra-Thin Low Temperature SiGe Buffer For The Growth of High Quality Strain-Relaxed Ge on Si (100) by UHVCVD T H Loh, H S Nguyen, C H Tung, A D Trigg, G Q Lo and S Tripathy (IMRE) Applied Physics Letter.  Published in 90, 092108 (2007).  
Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors W W Fang, N Singh, L K Bera, H S Nguyen, S C Rustagi, G Q Lo, N Balasubramanian and D L Kwong IEEE Electron Device Letters.  Published in vol. 28, No. 3, March 2007.
RF, DC, and Reliability Performance of Embedded MIM Capacitors on Organic Substrates for System-on-Package Applications E B Liao, H Y Li, L H Guo,  R Kumar, G Q Lo, N Balasubramanian and D L Kwong IEEE Transaction on Electron Devices.  Published in Vol. 54, No. 3, March 2007.
Fabrication Technology of Si Micro-Fluidic Devices for Microbial Cell Trapping Ramana Murthy Badam, Liang Zhu, Cheng Yong Teo, Xueli Peh, Hanhua Feng and Wen-Tso Liu  SPIE Photonic West 2007, 20 - 25 January 2007, San Jose, California, USA.  Published in Proceedings of SPIE Vol. 64620E-2.
Light-Speed Optical Control With a Nano-Opto-Electronic Device Selin H G Teo, J Singh, M B Yu, J B Zhang, L P Shi, M H Hong and Liu Ai Qun  IEEE MEMS, 21 - 25 Jan 2007.
SiGeO Layer Formation Mechanism At The SiGe/Oxide Interfaces During Ge Condensation S Balakumar, Suo Peng, Hoe K M, A Agarwal, Lo G Q, N Balasubramanian, D L Kwong and S Tripathy  Applied Physics Letters.  Published in 90, 032111 (2007).

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