Title
of Publication |
Author(s) |
Name of
Journal |
| Si, SiGe Nanowire Devices by Top-Down Technology and Their Applications |
N Singh, K D Buddharaju, S K Manhas, A Agarwal, S C Rustagi, G Q Lo, N Balasubramanian and D L Kwong |
IEEE Transactions on Electron Devices. Published in Vol. 55, No. 11, November 2008. |
| Low Voltage and High Responsivity Germanium Bipolar Phototransistor for Optical Detections in the Near-Infrared Regime |
Kah-Wee Ang, Ming-Bin Yu, Guo-Qiang Lo and Dim-Lee Kwong |
IEEE Electron Device Letters. Published in Vol. 29, No. 10, October 2008. |
| High-K Gated Germanium Metal-Oxide-Semiconductor Capacitors with GeO2 Surface Passivation and Fluorine Incoporation |
Ruilong Xie (NUS/IME), Wei He (NUS), Mingbin Yuand Chunxiang Zhu (NUS) |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages 10 - 11. |
| Evanescent-Coupled SEG-Ge Lateral and Vertical PIN Photodetectors Integrated on Si-Waveguide |
J Wang (IME/NUS), W Y Loh, K T Chua, H Zang (IME/NUS), Y Z Xiong, T H Loh, M B Yu, S J Lee (IME/NUS), G Q Lo and D L Kwong |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages no.966 - 967. |
| Gate-All-Around 4-nm Silicon Nanowire Schottky Barrier MOSFET with 1-D NiSi Source/Drain |
J W Peng (IME/NUS/CSM), S J Lee (NUS), G C Albert Liang (NUS), N Singh, C M Ng (CSM), G Q Lo) and D L Kwong |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages no. 258 - 259. |
| Device and Technology Platform with Silicon Nanowire |
G Q Lo, N Singh, S C Rustagi, K D Buddharaju, N Balasubramanian and D L Kwong |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan.(Invited Talk). Published pages no. 786 - 787. |
| Semiconductor Nanowires: From Growth to Devices Applications |
D L Kwong, G Q Lo, J D Ye, S T Tam, S J Lee (NUS) and X W Sun (NTU) |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages no. 118 - 119. |
| Structural, Electrical Characterization and Sharp-Blue Electroluminescence of As-Implanted Bulk ZnO |
J D Ye L J Tang, S F Choy, C H Tung, X W Sun, G Q Lo, S Tripathy (IMRE) and K L Teo (DSI) |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages 568 - 569. |
| ZnO/Si Heterostructured Light-Emitting Diodes by MOCVD |
S T Tan, J L Zhao (NTU), X W Sun (IME/NTU), J D Ye, G Q Lo, K L Teo (NUS/DSI) and D L Kwong |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages 994 - 995. |
| Erbium/Platium Silicided Gate-All-Around Silicon Nanowire Schottky source/Drain MOSFETs |
E J Tan (NTU/IME/IMRE), K L Pey (NTU), N Singh, G Q Lo, D Z Chi (IMRE), Y K Chin (NTU) and L J Tang |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pagges no. 260 - 261. |
| Effect of Nickel Silicide Intrusion on Schottky Barrier Nanowire MOSFET Fabricated Using Top-Down Technology |
Y K Chin (NTU/IME/CSM), K L Pey (NTU), N Singh, G Q Lo, L Chan (CSM), L H Tan and E J Tan (NTU/IME) |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages no. 436 - 437. |
| Impacts of Surface Orientation on Band Gap and Band Structure of Ulta-Thin Silicon Films |
Gang Zhang, Donglai Yao (IME/NUS), Guo-Qiang Lo and Baowen Li (NUS/NUS Graduate School) |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages no. 960 - 961. |
| Impacts of Cross Section Shape and Dimension on Electron Effective mass in Silicon Nanowires |
Donglai Yao (NUS/IME), Gang Zhang (NUS), Guo-Qiang Lo and Baowen Li (IME/NUS Graduate School) |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages no. 790 - 791. |
| Strong Light Output from Thin SRO/SiO2 Multilayers with Photonic Crystal Patterns |
Fang Fang Ren, M B Yu, J D Ye, Q Chen, S T Tan, G Q Lo and D L Kwong |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages no. 964 - 965. |
| Low Temperature GAA Poly-Si Nanowire TFT SONOS Memory for MLC Application |
J Fu (IME/NUS), Y Jiang (IME/NUS), N Singh, C X Zhu (IME/NUS), G Q Lo, N Balasubramanian and D L Kwong |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages no. 822 - 823. |
| Uniaxially Strained SiGe/Si Core/Shell Nanowire pFETs Integrated on Bulk Si with NixSiyGe1-x-y source and Drain Contacts |
Y Jiang (IME/NUS), N Singh, T Y Liow, P C Lim (IMRE), S Tripathy (IMRE), S A Oh (IMRE), G Q Lo, D S Chan (NUS) and D L Kwong |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages no. 792 - 793. |
| Copper Plug Barrier Process Optimization for Reliable Transistor Performance |
S K Manhas, M Chen, K D Buddharaju, H Y Li, R Murthy, S Balakumar, N singh, G Q Lo and D L Kwong |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages no. 390 - 391. |
| Accuracy Assessment of Charge-Based Capacitance Measurements for Nanoscale MOSFET Devices |
Hui Zhao (IME/NUS), Subhash C Rustagi, Fjun Ma (NUS/IME), Ganesh S Samudra (NUS), Navab Singh, G Q Lo and Dim-Lee Kwong |
International Symposium on Solid State Circuits and Materials (SSDM 2008), 23 - 26 Sep 2008, Japan. Published pages no. 886 - 887. |
| CMOS Compatiable Gate-All-Around Vertical Silicon-Nanowire MOSFETs |
B Yang, K D Buddharaju, S H G Teo, J Fu, N Singh, G Q Lo and D L Kwong |
38th European Solid-State Device Research Conference, 15 - 19 Sep 2008, Edinburgh. Published pages no. 318 - 321. |
| Si-Nanowire TAHOS (TaN/AI203/HfO2/SiO2/Si) Nonvolatile Memory Cell |
J Fu (IME/NUS), N Singh, B Yang, C X Zhu (IME/NUS), G Q Lo and D L Kwong |
38th European Solid-State Device Research Conference, 15 - 19 Sep 2008, Edinburgh. Published pages no.115 - 118. |
| Fast and Low Michelson Interferometer Thermo-Optical Switch on SOI |
Junfeng Song (IME/Jilin University), Q Fang, S H Tao, T Y Liow, M B Yu, GQ Lo and D L Kwong |
Optics Express. Published on 15 Sep 2008 in Vol. 16, No. 20. |
| Low-Cost and High-Speed SOI Waveguide-Based Silicide Schottky-Barrier MSM Photodetector for Broad Band Optical Communications |
Shiyang Zhu, G Q Lo and D L Kwong |
IEEE Photonics Technology Letter. Published in Vol. 20, No. 16, 15 August 2008. |
| Strong Vertical Light Output from Thin Silicon Rich Oxide/SiO2 Multilayers via In-plane Modulation of Photonic Crystal Patterns |
Fang Fang Ren, M B Yu, J D Ye, Q Chen, S T Tan, G Q Lo and D L Kwong |
Applied Physics Letters. Published in 93, 091901 (2008). |
| Efficient Tandem Organic Solar Cells with an Al/M0 O3 Intermediate Layer |
D W Zhao (IME/NTU), X W Sun (IME/NTU), C Y Jiang, A K K Kyaw G Q Lo and D L Kwong |
Applied Physics Letters. Published in 93, 083305 (2008) |
| Low-cost and High-gain Silicide Schottky-Barrier Collector Phototransistor Integrated on Silicon-Waveguide for Infrared Detection |
Zhu Shiyang, G Q Lo, M B Yu and D L Kwong |
Applied Physics Letters. Published in 93, 071108 (2008). |
| Germanium Source and Drain Stressors for Ultra-Thin-Body and Nanowire Field-Effect Transistors |
Tsung-Yang Liow (NUS/IME), Kian-Ming Tan (NUS), Rinus T P Lee (NUS), Ming Zhu (NUS), Ben L H Tan, N Balasubramanian and Yee-Chia Teo (NUS) |
IEEE Electron Device Letters. Published in Vol. 29, No. 7, July 2008. |
| Novel NiGe MSM Photodetector Featuring Asymmetrical Schottky Barriers using Sulfur Co-Implanatation and Segregation |
Kah-Wee Ang, Ming-Bin Yu, Shi-Yang Zhu, Khai-Tze Chua, Guo-Qiang Lo and Dim-Lee Kwong |
IEEE Electron Device Letters. Published in Vol. 29, No. 7, July 2008. |
| Novel Silicon-Carbon (Si:C) Schottky Barrier Enhancement Layer for Dark Current Suppression in Ge-on-SOI MSM Photodetectors |
K W Ang, S Y Zhu, J Wang (IME/NUS), K T Chua, M B Yu, G Q Lo and D L Kwong |
IEEE Electron Device Letters. Published in Vol. 29, No. 7, July 2008. |
| Vertical Silicon Nanowire Formation and Gate-All-Around MOSFET |
B Yang, K D Buddharaju, S H G Teo, N Singh, G Q Lo and D L Kwong |
IEEE Electron Device Letters. Published in Vol. 29, No. 7, July 2008. |
| Ultraviolet and Visible Electroluminescence from n-ZnO/SiOx/(n+,p+)-Si Heterostructured Light-Emitting Diodes |
S T Tan, X W Sun (NTU), J L Zhaos (NTU), S Iwan (NTU), Z H Cen (NTU) and T P Chen (NTU), J D Ye, G Q Lo, D L Kwong and K L Teo (DSI) |
Applied Physics Letters. Published in 93, 013506 (2008). |
| Ge Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern Dependent Ge-Condensation Technique |
Y Jiang (IME/NUS), N singh (IME), T Y Liow (IME/NUS), W Y Loh, S Balakumar, K M Hoe, C H Tung, V Bliznetsov, S C Rustagi, G Q Lo, D S H Chan (NUS) and D L Kwong |
IEEE Electron Device Letters. Published in Vol. 29, No. 6, June 2008 |
| Performance Breakthrough in 8nm Gate Length Gate-all-Around Nanowire Transistors Using Metallic Nanowire Contacts |
Y Jiang (IME/NUS), T Y Liow (IME/NUS), N Singh, L H Tan, G Q Lo, D S H Chan (NUS) and D L Kwong |
2008 Symposium on VLSI Technology, 17 - 20 June 2008, USA. Published pages no. 34 - 35. |
| 5 nm Gate Length Nanowire-FETs and Planar UTB-FETs with Pure Germanium Source/Drain Stressors and Laser-Free Melt-Enhanced Dopant (MeltED) Diffusion and Activation Technique |
Tsung-Yang Liow (NUS/IME), Kian-Ming Tan (NUS), Rinus T P Lee (NUS), Ming Zhu (NUS), Ben L H Tan, Ganesh S Samudra (NUS), N Balasubramanian and Yee-Chia Yeo (NUS) |
2008 VLSI Technology Symposium, 17 - 20 June 2008, USA. Published pages no. 36 - 37. |
| High Performance Embedded RF Passive Device Process Integration |
H Y Li, Y M Khoo, Navas Khan, K W Teoh, Vempati Srinivasa Rao, H B Li, E B Liao, S Mohanraj, V Kripesh and K Rakesh |
ECTC 2008. 27 - 30 May 2008, Florida USA. Published pages no. 1709 - 1713. |
| Passive Ring-Assisted Mach-Zehnder Interleaver on Silicon-on-Insulator |
Junfeng Song (IME/Jilin University, China), Q Fang, S H Tao, M B Yu, G Q Lo and D L Kwong |
Optics Express. Published on 23 May 08 in Vol. 16, No. 12. |
| Analysis of the Effects of Fringing Electric Field on FinFET Device Performance and Structural Optimization Using 3D Simulation |
Hui Zhao (NUS/IME), Yee-Chia Yeo (NUS), Subhash C Rustagi and Ganesh S Samudra (NUS) |
IEEE Transactions on Electron Devices. Published in Vol. 55, No. 5, May 2008. |
| Photonic Bandgap Crystal Resonator Enhanced, Laser Controlled Modulations of Optical Interconnects for Photonic Integrated Circuits |
Selin H G Teo, A Q Liu (NTU), J B Zhang (DSI), M H Hong (DSI), J Singh, M B Yu, N Singh and G Q Lo |
Optics Express. Published in Vol. 16, No. 11 on 16 May 2008. |
| Evanescent-Coupled Ge-PIN Photodetectors on Si-Waveguide with SEG-Ge and Comparative Study of Lateral and Vertical PIN Configurations |
J Wang (IME/NUS), W Y Loh, K T Chua, H Zang (IME/NUS), Y Z Xiong, T H Loh, M B Yu, S J Lee (NUS), G Q Lo and D L Kwong |
IEEE Transactions on Electron Devices. Published in vol. 29, No. 5, May 2008. |
| Si-Nanowire Based Gate-All-Around Non-Volatile SONOS Memory Cell |
J Fu (IME/NUS), N Singh, K D Buddharaju, S H G Teo, C Shen (NUS), Y Jiang (IME/NUS), C X Zhu (NUS), M B Yu, G Q Lo, N Balasubramanian, D L Kwong, E Gnani (ARCES, Unviersity of Bologna) and G Baccarani (ARCES, Unviersity |
IEEE Electron Device Letters. Published in Vol. 29, No. 5, May 2008. |
| Low Loss (~6.45 dB/cm) sub-Micron Polycrystalline Silicon Waveguide Integrated with Efficient SiON Waveguide Coupler |
Q Fang, J F Song (IME/Jilin University, China), S H Tao, M B Yu, G Q Lo and D L Kwong |
Optics Express. Published on 22 Apr 08 in Vol. 16, No. 9. |
| High-Bendability Flexible Dye-Sensitized Solar Cell with a Nanoparticles-Modified ZnO-Nanowire Electrode |
C Y Jiang, X W Sun (IME/NTU), K W Tan , A K K Kyaw, G Q Lo and D L Kwong |
Applied Physics Letters. Published online in 7 April 2008 in 92, 142101 (2008) |
| Strained n-MOSFET with Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance |
Kah-Wee Ang (NUS/IME), Jianqiang Lin (NUS), Chih-Hang Tung, N Balasubramanian, Ganesh S Samudra (NUS) and Yee-Chia Yeo (NUS) |
IEEE Transactions on Electron Devices. Published in vol. 55, No. 3, March 2008. |
Thin Amorphous Si/Si3N4 Based Light-Emitting Device Prepared with Low Thermal-Budget |
W K Tan, M B Yu, Q Chen, W Y Lo, J D Ye, X H Zhang (IMRE), G Q Lo and D L Kwong |
IEEE Electronics Device Letters. Published in vol. 29, No. 3, March 2008. |
| Near-Infrared Waveguide-Based Nickel Silicide Schottky-Barrier Photodetector for Optical Communications |
Shiyang Zhu, M B Yu, G Q Lo and D L Kwong |
Applied Physics Letters. Published in 92, 081103 (2008). |
| Application of Dopant Segregation to Metal-Germanium-Metal Photodetectors and its Dark Current Suppression Mechanism |
H Zang (IME/NUS), W Y Loh, J Wang (IME/NUS), M B Yu, G Q Lo, D L Kwong, S J Lee (NUS) and B J Cho (NUS) |
Applied Physics Letters. Published in 92, 051110 (2008). |
| Dark-Current Suppression in Metal-Germanium-Metal Photodetectors Through Dopant-Segregationin NiGe-Schottky Barrier |
H Zang (IME/NUS), S J Lee (NUS), W Y Loh, J Wang IME/NUS), K T Chua, M B Yu, B J Cho (NUS), G Q Lo and D L Kwong |
IEEE Electron Device Letters. Published in Vol. 29, No. 2, February 2008. |
| Rigorous Surface-Potential Solution for Undoped Symmetric Double-Gate MOSFETs Considering Both Electrons and Holes |
Z M Zhu (NTU/IME), X Zhou (NTU), S C Rustagi , G H See(NTU),S H Lin (NTU), C Q Wei (NTU), G J Zhu (NTU), G H Lim (NTU) |
IEEE Trans. On Electron Devices. Published in Vol. 55, No. 2, February 2008. |
| Design and Fabrication of a Line-Defect Bend Sandwiched with Air Trenches in a Photonic Crystal Platform |
S H Tao, M B Yu, J F Song, R Yang, G Q Lo and D L Kwong |
Applied Physics Letters. Published in 92, 031113 (2008) |
| Spacer Removal Technique for Boosting Strain in N-Channel FinFETs with Silicon-Carbon Source and Drain Stressors |
Tsung-Yang Liow (NUS/IME), Kian-Ming Tan (NUS), Rinus T P Lee (NUS), Ming Zhu (NUS), Keng-Mun Hoe, Ganesh S Samudra (NUS), N Balasubramanian and Yee-Chia Yeo (NUS) |
IEEE Electton Device Letters. Published in Vol. 29, No. 1, Jaunary 2008. |
| Widely Tunable Work Function TaN/Ru Stacking Layer on HfLaO Gate Dielectrics |
X P Wang (NUS/IME), M F Li (NUS/IME), H Y Yu (Interuniveresity MicroElectronics Center, Belgium), J J Yang (NUS), J D Chen (NUS), C X Chu (NUS), A Y Du, W Y Loh, S Biesemans (nteruniveresity MicroElectronics Center, Belgium), Albert Chin (National Chiao-Tung University, Taiwan), G Q Lo and D L Kwong |
IEEE Electron Device Letters. Published in Vol. 29, No. 1, January 2008. |
| Trap Layer Engineered Gate-All-Around Vertically Stacked Twin Si-Nanowire-Non Volatile Memory |
J Fu (IME/NUS), K D Buddharaju, S H G Teo, Chunxiang Zhu (IME/NUS), M B Yu, N Singh, G Q Lo, N Balasubramanian and D L Kwong |
IEEE International Electron Devices. Meeting (IEDM), 10 - 14 Dec 2007 |
| Strained Si/SiGe Channel with Buried Si0.99C0.011 for Improved Drivability, Gate Stack Integrity and Noise Performance |
Wei Yip Loh, Hui Zang (NUS), Hoon Jung Oh (NUS), Kyu Jin Choi (Jsung Engineering), Hoai Son Nguyen, Guo Qiang Lo and Byung Jin Cho (NUS) |
IEEE Trans. Electron Device. Published inVol. 54, No. 12, December 2007. |
| Tensile-Strained Germanium CMOS Integration on Silicon |
H Zang (NUS/IME), W Y Loh, J D Ye, T H Loh, G Q Lo and Byung Jin Cho (NUS) |
IEEE Electron Device Letter. Published in Vol. 28, NO. 12, December 2007. |
| Degradation of Low-Frequency Noise in SiGe/SiGeC Surface Channel p-type MOSFET Due to Consuming os Si-Cap |
R Yang, Y Z Xiong, W Y Loh, J D Ye, M B Yu, C Shen (IME/NUS), J J Yang (IME/NUS), K T Chua, K M Hoe, G Q Lo, N Balasubramanian and D L Kwong |
Applied Physics Letters. Published in 91, 233505 (2007). |
| N-Channel (110)~Sidewall Strained FinFETs with Silicon-Carbon Source and Drain Stressors and Tensile Capping Layer |
Tsung-Yang Liow (NUS/IME), Kian-Ming Tan (NUS), Rinus T P Lee (NUS), Chih-Hang Tung, Ganesh S Samudra (NUS), N Balasubramanian and Yee-Chia Yeo (NUS) |
IEEE Electron Device Letters. Published in Vol. 28, No. 11, November 2007. |
| Impact of Local Strain from Selective-Epitaxial-Germanium with Thin Si/SiGe-Buffer for High-Performance p-i-n Photodetector with Low-Thermal Budget |
W Y Loh, J Wang (NUS), J D Ye, R Yang, H S Nguyen, K T Chua, J F Song, T H Loh, Y Z Xiong, S F Lee (NUS), M B Yu, G Q Lo and D L Kwong |
IEEE Electron Device Letter. Published in Vol. 28, No. 11, November 2007. |
| CMOS Inverter Based on Gate-All-Around Silicon Nanowire MOSFETs Fabricated Using Top-Down Approach |
S C Rustagi, N Singh, W W Fang (NUS), K D Buddharaju, S R Omampuliyur, S H G Teo, C H Tung, G Q Lo,N Balasubramanian and D L Kwong |
IEEE Electron Device Letters. Published in Vol. 28, No.11, Nov 2007. |
| Selective-Epitaxial Ge-on-SOI High Speed Photodetectors Using Low Temperature Ulta-thin Si0.8Ge0.2 Buffer |
T H Loh, , R Murthy, H S Nguyen, M B Yu, W Y Loh, G Q Lo, N Balasubramanian, D L Kwong, J Wang (NUS) and S J Lee (NUS) |
Applied Physics Letters. Published in 91, 073503 (2007). |
| P-type Conduction in Unintentional Carbon-Doped ZnO Thin Films by MOCVD |
S T Tan (NTU/IME), X W Sun (NTU/IME), Z G Yu and P Wu (IHPC), G Q Lo and D L Kwong |
Applied Physics Letters. Published in 91, 072101 (2007). |
| Effects of Alloying and Localized Electronic States on the Resonant Raman Spectra of Zn1-xMgxO Nanocrystals |
J D Ye, K W Teoh, X W Sun (IME/NTU), G Q Lo, D L Kwong, H Zhao (Nanjing Univrsity), S L Gu (Nanjing University), R Zhang (Nanjing University) and Y D Zheng (Nanjing University), S A Oh (IMRE), X H Zhang (IMRE) and S Tripathy (IMRE) |
Applied Physics Letters. Published in 91, 091901 (2007). |
| Multi-Total Internal Reflection in Polydimethylsilowane Microfluidic for Enhanced Absorbance Detection |
Jack Sheng Kee (IME/NTU), Daniel Puiu Poenar (NTU) and Levent Yobas (IME) |
microTAS 2007, 7 - 11 Oct 2007, Paris, France. |
| Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET |
S C Rustagi, N Singh, Y F Lim, G Zhang, S Wang, G Q Lo, N Balasubramanian and D L Kwong (IME) |
IEEE Electron Device Letters, Vol. 28, No. 10, October 2007. |
| High Transmission Photonic Crystal Line-Defect Bend with Double Low-Index Trenches |
S H Tao, M B Yu, Q Fang, J F Song, R Yang, G Q Lo and D L Kwong |
GFP 2007, IEEE Group IV Photonics Conference, 19 - 21 Sep 2007, Japan. |
| Visible Luminescence from Controlled Multi-Layer Stack Comprising of Thin Amorphous Silicon and Silicon Nitride Layers |
W K Tan, M B Yu, Q Chen, J D Ye, G Q Lo and D L Kwong |
GFP 2007, Internaitonal Conference on Group IV Photonics Conference, 19 - 21 Sep 2007, Japan. |
| High Speed Selective-Area-Expitaxial Ge-on-SOI PIN Photo-Detector Using Thin Low Temperature Si0.8 Ge0.2Buffer by Ultra-High-Vacuum Chemical Vapor Deposition |
Loh Ter-Hoe, Wang Jian, Nguyen Hoai-Son, Murthy Ramana, Yu Ming-Bin, Loh Wei-Yip, Lo Guo-qiang, N Balasubramanian and Kwong Dim-Lee |
GFP 2007, IEEE Group IV Photonics Conference, 19 - 21 Sep 2007, Japan. |
| Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform |
J W Wang (IME/NUS), W Y Loh, H Zang (IME/NIUS), M B Yu, K T Chua, T H Loh, J D Ye, R Yang, X L Wang, S J Lee (NUS), B J Cho (NUS), G Q Lo and D L Kwong |
GFP 2007, IEEE Group IV Photonics Conference, 19 - 21 Sep 2007, Japan. |
| Strained N-channel FinFETs with High-Stress Nickel Silicide-Carbon Contacts and Integration with FUSI Metal Gate Technology |
Tsung-Yang Liow (NUS/IME), Rinus T P Lee (NUS), Kian-Ming Tan (NUS), Ming Zhu (NUS), Keat-Mun Hoe (IME), Ganesh S Samudra, N Balasubramanian and Yee-Chia Yeo (NUS) |
International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan. |
| Visible Light Emission from Controlled a-Si/SiN Multi-Layer Structures |
Q Chen, W K Tan, M B Yu, L Ding (NTU), T P Chen (NTU), G Q Lo and D L Kwong |
International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan. |
| MOVPE Prepared ZnO/Si Heterojunction Diodes with Dual Functions: Light-Emission and UV Photo-Detection |
J D Ye, S L Gu (Nanjing University), X W Sun (IME/NTU), G Q Lo, D L Kwong and Y D Zheng (Nanjing University) |
International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan. |
| Enhanced Thermal Stability of Nickel Germanide with Ultrathin Ti Layer |
Zhu Shi-Yang, M B Yu, G Q Lo and D L Kwong (IME) |
International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan. |
| CMOS Compatible Si-Nanowire Inverter Logic Gate for Lower Power Applications |
N Singh, K D Buddharaju, S C Rustagi, Selin H G Teo, A Agarwal, L Y Wong, L J Tang, C H Tung, J Yu, G Q Lo, N Balasubramanian and D L Kwong (IME) |
International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan. |
| Strained Ge-rich SiGe Nanowire pFETs with High-k/Metal Gate Fabricated using Germanium Condensation Technique |
Y Jiang (IME/NUS), N singh (IME), D S H Chan (NUS), T Y Liow (IME/NUS), W Y Loh, S Balakumar, Y Sun, G Q Lo and D L Kwong (IME/NUS) |
International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan. |
| Silicon Strain-Transfer-Layer (STL) and Graded Source/Drain Stressors for Enhancing the Performance of Silicon-ermanium Channel P-MOSFETs |
Grance Huiqi (NUS/IME), Eng-Huat Toh (NUS), Chih-Hang Tung, S Tripathy (IMRE), S Balakumar, Guo-Qiang Lo), Ganesh Samudra (NUS) and Yee- Chia Yeo (NUS) |
International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan. |
| Device Performance and Reliability Considerations of Biaxially Strained Si by Wafer-Bonding-Technology |
W Y Loh (IME), D S H Chan (NUS), D Y J Choo (IME/NUS), S M Koh (IME/NUS), R Yang (IME), X W Zhang (IME), C Cai (IHPC), G Q Lo (IME) and D L Kwong (IME) |
International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan. |
| Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon |
H Zhang (NUS/IME), W Y Loh, J D Ye, T H Loh, G Q Lo and Byung Jin Cho (NUS) |
International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan. |
| Highly Manufacturable CMOSFETs with Single High-k (HfLaO) and Dual Metal Gate Integration Process |
X P Wang (NUS/IME/IMEC), M F Li (NUS/IME/Fudan University), H Y Yu, J J Yang (NUS), C X Zhu (NUS), W S Hwang (NUS), W Y Loh, A Y Du J D Chen (NUS),Albert Chin (NUS/IME), S Biesemans (IMEC), G Q Lo and D L Kwong |
International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan. |
| Silicon Nanowire Schottky Barrier NMOS Transistors |
E J Tan (NTU, IME), K L Pey (NTU), N Singh, G Q Lo, D Z Chi (IMRE), K M Hoe, P S Lee (NTU) and G D Cui (NTU) |
International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan. |
| Impacts of Body Contact Structures on SOI NMOSFET DC, RF and 1/f Noise Characteristics |
Rong Yang (IME/Chinese Academy of Sciences), Yong Zhong Xiong, J L Shi, H Qian (Chinese Academy of Sciences), J F Li (Chinese Academy of Sciences), J Fu, W Y Loh, M B Yu , G Q Lo, N Balasubramanian and D L Kwong |
International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan. |
| Practical Solution to Enhance EWF Tunability of Ni FUSI Gates on HfO2 |
X P Wang (NUS/IME/IMEC), J J Yang (NUS), H Y Yu, M F Li (NUS/IME/Fudan University), J D Chen (NUS), R L Xie (NUS), C X Zhu (NUS), A Y Du (IME), P C Lim (IMRE), Andy Lim (NUS/IME), Y Y Mi (IMRE), Doreen MY Lai (IMRE), W Y Loh (IME), S Biesemans (IMEC), G Q Lo and D L Kwong |
International Conference on Solid State Devices and Materials, 18 - 21 Sep 2007, Japan. |
| Strain Enhancement in Spacerless N-Channel FinFETs with Silicon-Carbon Source and Drain Stressors |
Tsung-Yang Liow (NUS/IME), Kian-Ming Tan (NUS), Rinus T P Lee (NUS), Ming Zhu (NUS), Keat-Mun Hoe, Ganesh S Samudra, N Balasubramanian and Yee-Chia Yeo (NUS) |
European Solid-State Device Research Conference, 11-13 September 2007. |
| Gate-All-Around Si-Nanowire CMOS Inverter Logic Fabricated Using Top-Down Approach |
K D Buddharaju, N Singh, S C Rustagi, Selin H G Teo, L Y Wong, L J Tang, C H Tung, G Q Lo, N Balasubramanian and D L Kwong |
European Solid-State Device Research Conference, 11-13 September 2007. |
| Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications |
C Ren, D S H Chan, M F Li, W Y Loh, S Balakumar, C H Tung, N Balasubramanian and D L Kwong |
IEEE Transactions of Electron Devices. Published in Vol. 53, No. 8, August 2006. |
| On-chip Vertical Tapered Solenoidal Inductor with the High Self-Resonance Frequency |
Kang Kai, Shi Jinglin, Rustagi Subhash, Li Le-Wei (NUS), K Mouthaan (NUS), Yin Wen-Yan (Shanghai Jiao Tong University) and S Zouhdi (LGEP, France) |
IEE Electronics Letters. Published on 2nd August 2007, Vol. 43 No. 16. |
| Enhanced Thermal Stability of Nickel Germanide with Ultrathin Ti Layer |
Zhu Shi-Yang, M B Yu, G Q Lo and D L Kwong |
Applied Physics Letters. Published in 91, 051905 (2007). |
| Flicker-Noise and its Degradation Characteristics under Electrical Stress in MOSFETs with Thin Strained-Si/SiGe Dual-Quantum-Well |
Y Jiang (IME/NUS), W Y Loh, D S H Chan (IME/NUS), Y Z Xiong, C Ren (IME/NUS), Y F Lim, G Q Lo and D L Kwong |
IEEE Electron Device Letters. Published in Vol. 28, No. 7, July 2007. |
| Observation of Metal Layer Stress on Si Nanowires in Gate-All-Around High-k/Metal Gate Device Structures |
N Singh, W W Fang, S C Rustagi , K D Budharaju, Selin H G Teo, S Mohanraj, S Mohanraj , G Q Lo, N Balasubramanian and D L Kwong |
IEEE Electron Device Letters. Published in Vol. 28, No. 7, July 2007. |
| Improved Dye-Sensitized Solar Cells with a ZnO-Nanoflower Photoanode |
C Y Jiang, X X W Sun, G Q Lo, D L Kwong and J X Wang |
Applied Physics Letters. Published in 90, 263501 (2007) |
| Electrical Detection of Nucleic Acids Using Target-Guided Formation of Conducting Polymer Nanowires in Nanogaps |
Y Fan, X T Chen, C H Tung, J M Kong and Z Q Gao |
Transducer 07 & Euronsensors XXI, 10 - 14 June 2007 |
| Direct Detection of Nucleic Acids by Tagging Phosphates on The Backbone with Conductive Nanoparticles |
Y Fan, X Chen, J Kong, C H Tung and Gao Zhi Qiang |
Transducer 07 & Euronsensors XXI, 10 - 14 June 2007 |
| A Wide Band Scalable and SPICE-Compatible Model for On-Chip Interconnects Up to 80 GHz |
Kai Kang (IME/NUS), Lan Nan (IME/NUS), Subhash C Rustagi, Koen Mouthaan, Jinglin Shi, Rakesh Kumar and Le-Wei Li (NUS) |
RFIC 2007, 3 - 8 June 2007 |
| Red Light Emission from Controlled Multi-Layer Stack Comprising of Thin Amorphous Silicon and Silicon Nitride Layers |
W K Tan, M B Yu, Q Chen, J D Ye, G Q Lo and D L Kwong |
Applied Physics Letters. Published in 90, 221103 (2207). |
| Correlation Between Carrier Recombination and p-type Doping in P Mono-Doped and in-P Codoped ZnO Epilayers |
J D Ye (IME/(Nanjing University), S L Gu (Nanjing University), F Lui (Nanjing University), S M Zhu (Nanjing University), Y Shi (Nanjing University) and Y D Zheng (Nanjing University), X W Sun, G Q Lo and D L Kwong |
Applied Physics Letters. Published in 90, 174107 (2007) |
| Competitive dbsorption and Two-Site Occuption Effects in Metal Organic Chemical Vapor Deposition of ZnO |
J D Ye (IME/Nanjing University), S L Gu (Nanjing University), W Liu (Nanjing University), S M Zhu (Nanjing University), R Zhang (Nanjing University), Y Shi (Nanjing University), Y D Zheng (Nanjing University) and X W Sun, G Q Lo and D L Kwong |
Applied Physics Letters. Published in 90, 152108 (2007) |
| Fabrication of Self-sealed Circular Micro/Nano Fluidic Channels in Glass Substrates |
Wong Chee Chung (IME/NTU), Ajay Agarwal, B Balasubramanian and Dim Lee Kwong |
Nanotechnology 18 (2007).. Published on 28 Feb 07. |
