:::::::::: Institute of Microelectronics, Singapore ::::::::::

Nano-Electronics & Photonics (NanoEP) Programme

By leveraging the advanced Si CMOS-fabrication technologies in IME's Semiconductor Process Technology Laboratory, the programme activities of NanoEP focus on the Si-CMOS platform based Si-Nanowire devices with applications in electronics and bio-electronics, novel storage memory, and Si Photonic devices with applications in high-speed optical interconnects and light-emitters.

Research Areas

Nano-Electronics
- Si-Nanowire based device technology and circuit application
- Novel devices structure and process technology
- New device application and structure portfolio
Si-CMOS Compatible Photonics Integrated Circuits Platform

Device Components and process module libraries
Active components research in modulator and photodetector
Si-CMOS compatible monolithic integration of OEIC

Si-Based Light Sources
- Si-based light-emitting devices research
- ZnO on Si-substrates

News Highlights

Institute of Microelectronics (IME) Wins the Highly Coveted Singapore National Technology Award 2008
IME to speak at the prestigious 2008 International Conference on Solid State Devices and Materials (SSDM 2008) held on 24th September 2008
IME’s Researchers developed Sub-Femto Farad Nanowire Capacitance Measurement Capability
Low Dark Current and High Speed Germanium MSM Photodetector Featuring Asymmetrical Schottky Barriers
IME Researchers Successfully Developed Ultra-scaled GAA SiNW FET with NiSi Source/Drain Extensions
IME develops Vertical Silicon-Nanowire Formation and Gate-All-Around MOSFET
IME demonstrates high performance Ge-on-SOI MSM photodetector through Schottky Barrier Engineering
IME Singapore Continues to Make Head Waves in Si-Based Nanowire Technology
Schottky barrier engineering on Silicon Nanowire transistors
High-carrier injection velocity Silicon-Germanium Nanowire MOSFET
Talk on Photonic MetaMaterials
Nanowire Non-Volatile Memory
IME demonstrates dual-colour EL light emission
Unisantis and IME to jointly develop breakthrough three-dimensional transistor in Singapore
Invited talk at Symposium on Nano-Devices
IME demonstrates surface illuminated p-i-n Ge photodetectors
Quantum effects on carrier transport in Nanowire MOSFETs
IME launches Nano-Electronics & Photonics Programme
IME demonstrated Ge-on-Si waveguide photodetectors
IME and Fujikura strengthen partnership through joint development of chromatic dispersion compensator devices
IME to present research papers at SSDM 2007
IME researcher’s invited talk at Device Research Conference
IME presents papers at conferences
IME demonstrates electrically-excited emission from silicon
IME researcher presents Silicon Nanowire talk at ECS Symposium
IME to develop first-of-its-kind silicon nanowire biochip for genetic testing with Singapore and Australian biotech companies
CMOS logic gates with GAA nanowire MOSFETs using top-down approach
Recognition for IME’s research in Silicon nanowires @ IEDM
IME develops CMOS-compatible Silicon nanowire sensor with efficient sample delivery

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