The 2008 International Conference on Solid State Devices and Materials (SSDM2008) conference provides an excellent platform for the industry to discuss key aspects of solid-state devices and materials. This year conference will be held from September 24 till September 26, 2008 at Tsukuba International Congress Center (Tsukuba, Ibaraki, Japan) and will cover areas ranging from circuits and systems to devices and materials.
IME is proud to be part of the annual event and will provide a wide spectrum of Singapore’s Semiconductor Nanotechnology research activities including material synthesis, devices technology and the applications development efforts. IME will be presenting the recent works carried out in the institute
and through collaboration with other research groups.
A total of 12 papers (2 invited papers) and 3 posters will be presented by IME over the 3 days conference.
Papers:
1. |
September 24, 14:00 - 16:00, Room 202B
Area 8 : Advanced Material Synthesis and Crystal Growth Technology
F-1 : Nano Structure
Invited Paper: Semiconductor Nanowires: From Growth to Devices Applications
D L Kwong (IME), G Q Lo (IME), J D Ye (IME), S T Tam (IME), S J Lee (NUS) and X W Sun (NTU) |
2. |
September 25, 9:00 - 10:35, Room 102
Area 3 : CMOS Devices/Device Physics
B-3 : FinFET and GAA Devices
Gate-All-Around 4-nm Silicon Nanowire Schottky Barrier MOSFET with 1-D NiSi Source/Drain
J W Peng (IME/NUS/CSM), S J Lee (NIS), G C Albert Liang (NUS), N singh (IME), C M Ng (CSM), G Q Lo (IME) and D L Kwong (IME) |
3. |
September 25, 9:00 - 10:35, Room 102
Area 3 : CMOS Devices/Device Physics
B-3 : FinFET and GAA Devices
Erbium/Platium Silicided Gate-All-Around Silicon Nanowire Schottky source/Drain MOSFETs
E J Tan (NTU/IME/IMRE), K L Pey (NTU), N singh (IME), G Q Lo (IME), D Z Chi (IMRE), Y K Chin (NTU) and L J Tang (IME) |
4.
|
September 25, 16:00 - 17:15, Room 304
Area 13 : Applications of Nanotubes and Nanowires
H-5 : Si-Based Nanowire Devices
Invited Paper: Device and Technology Platform with Silicon Nanowire
G Q Lo (IME), N Singh (IME), S C Rustagi (IME), K D Buddharaju (IME), N Balasubramanian (IME) and D L Kwong (IME) |
5. |
September 25, 16:00 - 17:15, Room 304
Area 13 : Applications of Nanotubes and Nanowires
H-5 : Si-Based Nanowire Devices
Impacts of Cross Section Shape and Dimension on Electron Effective mass in Silicon Nanowires
Donglai Yao (NUS/IME), Gang Zhang (NUS), Guo-Qiang Lo (IME) and Baowen Li (IME/NUS Graduate School) |
6. |
September 25, 16:00 - 17:15, Room 304
Area 13 : Applications of Nanotubes and Nanowires
H-5 : Si-Based Nanowire Devices
Uniaxially Strained SiGe/Si Core/Shell Nanowire pFETs Integrated on Bulk Si with NixSiyGe1-x-y source and Drain Contacts
Y Jiang (IME/NUS), N Singh (IME), T Y Liow (IME), P C Lim (IMRE), S Tripathy (IMRE), S A Oh (IMRE), G Q Lo (IME), D S Chan (NUS) and D L Kwong (IME) |
7. |
September 25, 16:00 - 17:25, Room 406
Area 4 : Advanced Memory Technology
J-5 : Flash Memory II
Low Temperature GAA Poly-Si Nanowire TFT SONOS Memory for MLC Application
J Fu (IME/NUS), Y Jiang (IME/NUS), N Singh (IME), C X Zhu (IME/NUS), G Q Lo (IME), N Balasubramanian (IME) and D L Kwong (IME) |
8. |
September 26, 9:00 - 10:30, Room 202A
Area 7 : Photonic Devices and Device Physics
E-7 : Si Photonics
Impacts of Surface Orientation on Band Gap and Band Structure of Ulta-Thin Silicon Films
Gang Zhang (IME), Donglai Yao (IME/NUS), Guo-Qiang Lo (IME) and Baowen Li (NUS/NUS Graduate School) |
9. |
September 26, 10:45 - 12:15, Room 202A
Area 7 : Photonic Devices and Device Physics
E-8 : Photonic Crystals and Si Photonics
Evanescent-Coupled SEG-Ge Lateral and Vertical PIN Photodetectors Integrated on Si-Waveguide
J Wang (IME/NUS), W Y Loh (IME), K T Chua (IME), H Zang (IME/NUS), Y Z Xiong (IME), T H Loh (IME), M B Yu (IME), S J Lee (IME/NUS), G Q Lo (IME) and D L Kwong (IME) |
10. |
September 26, 10:45 - 12:15, Room 202A
Area 7 : Photonic Devices and Device Physics
E-8 : Photonic Crystals and Si Photonics
Strong Light Output from Thin SRO/SiO2 Multilayers with Photonic Crystal Patterns
Fang Fang Ren, M B Yu, J D Ye, Q Chen, S T Tan, G Q Lo and D L Kwong (IME) |
11. |
September 26, 15:15 - 16:55, Room 102
Area 3 : CMOS Devices/Device Physics
B-10 : Characterization and Modeling & Nanoscale MOSFETs
Accuracy Assessment of Charge-Based Capacitance Measurements for Nanoscale MOSFET Devices
Hui Zhao (IME/NUS), Subhash C Rustagi (IME), Fjun Ma (NUS/IME), Ganesh S Samudra (NUS), Navab Singh (IME), G Q Lo (IME) and Dim-Lee Kwong (IME) |
12. |
September 26, 15:15 - 17:00, Room 202A
Area 7 : Photonic Devices and Device Physics
E-10 : Lasers and LEDs
ZnO/Si Heterostructured Light-Emitting Diodes by MOCVD
S T Tan (IME), J L Zhao (NTU), X W Sun (IME/NTU), J D Ye (IME), G Q Lo (IME), K L Teo (NUS/DSI) and D L Kwong (IME) |
Posters Presentation:
1. |
September 25, 13:00 - 14:45
Area 2, P-2
Copper Plug Barrier Process Optimization for Reliable Transistor Performance
S K Manhas, M Chen, K D Buddharaju, H Y Li, R Murthy, S Balakumar, N singh, G Q Lo and D L Kwong (IME) |
2. |
September 25, 13:00 - 14:45
Area 3, P-3
Effect of Nickel Silicide Intrusion on Schottky Barrier Nanowire MOSFET Fabricated Using Top-Down Technology
Y K Chin (NTU/IME/CSM), K L Pey (NTU), N Singh (IME), G Q Lo (IME), L Chan (CSM), L H Tan (IME) and E J Tan (NTU/IME) |
3. |
September 25, 13:00 - 14:45
Area 8, P-8
Structural, Electrical Characterization and Sharp-Blue Electroluminescence of As-Implanted Bulk ZnO
J D Ye (IME) L J Tang (IME), S F Choy (IME), C H Tung (IME), X W Sun (IME), G Q Lo (IME), S Tripathy (IMRE) and K L Teo (DSI) |
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