Twelve IME papers were presented at the prestigious 2007 International Conference on Solid State Devices and Materials (SSDM 2007), held in Japan from 18-21 September 2007.

One of the papers - “CMOS Compatible Si-Nanowire Inverter Logic Gate for Low Power Applications” received special mention for one of the notable presentations at SSDM 2007. Out of the 12 papers, 8 are authored/co-authored by students who are attached to IME from National University of Singapore (NUS) and Nanyang Technological University (NTU).

The titles of the papers are:

1. CMOS Compatible Si-Nanowire Inverter Logic Gate for Lower Power Applications
2. Strained Ge-rich SiGe Nanowire pFETs with High-k/Metal Gate Fabricated using Germanium Condensation Technique  
3. A Novel Approach to Fabricate - 120nm Thick Fully Relaxed Ge-pon-Insulator
4. Visible Light Emission from Controlled a-Si/SiN Multi-Layer Structures
5. Device Performance and Reliability Considerations of Biaxially Strained Si by Wafer-Bonding-Technology
6. Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon
7. MOVPE prepared ZnO/Si heterojunction Diodes with Dual Functions: Light emission and UV Photoemission
8. Enhanced Thermal Stability of Nickel Germanide with Ultrathin Ti Layer
9. Impacts of Body Contact Structures on SOI NMOSFET DC, FR and 1/f Noise Characteristics
10. Si Quantum dot TFT Nonvolatile Memory for System on Panel Applications
11. Label Free Electrical Detection of Single Nucleotide Polymorphisms using Nanowire Biosensors
12. Electrical Sensing of Calcium Ions using Silicon Nanowire Array

The SSDM is one of the most important and prestigious international conferences held in Japan. Since its start in 1969, the conference has provided a good opportunity to present and discuss key aspects of solid state devices and materials.