IME researcher Dr. Balasubramanian gave an invited talk on "Silicon Nanowire Field Effect Devices By Top-Down CMOS Technology" at the 65th Device Research Conference held in University of Notre-Dame, Indiana from 18-20 June.

For more than 60 years, the Device Research Conference has brought together leading scientists, researchers and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of semiconductor devices. The technical programme is a mix of invited, oral and poster presentations. In addition, the conference holds three evening "rump" sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of competing device technologies.

In the invited talk, Dr. Bala gave an overview of IME's recent work on top-down silicon nanowire device technology, applications to CMOS and bio-sensors. The talk highlighted the advantages of the silicon nanowires based Gate All Around Transistor (GAA-FET) architecture, IME's top-down technology approach, GAA based FET and inverter logic, its potential advantages for low power circuit applications and silicon nanowires as a field effect bio-sensor.

He also served as a member of the panel which includes Erik Bakkers (Philips Research), Paul Solomon (IBM Research) and Ali Keshavarzi (Intel) for one of the rump sessions which debated on "The Future of Nanowire Devices: Top-down or bottom-up?". For an abstract of the panel discussion, visit http://drc.ee.psu.edu/advanceprog2.asp