Tezzaron Semiconductor Ltd, a start-up company specialising in 3D wafer scale integration, has signed a Memorandum of Understanding with IME to meet its strategic research demands and to keep its technology competitive. 

IME, with its expertise in wafer-to-wafer bonding and advanced wafer processing facilities, has been supporting the development needs of Tezzaron since the inception of Tezzaron in Singapore five years ago.  IME has assisted Tezzaron through various research collaboration projects, which were pivotal to the successful development and demonstration of Tezzaron’s patented FaStack™ process technology which stacks whole semiconductor wafers and creates a very high density of vertical inter-wafer interconnections.  IME also plans to assist Tezzaron in reliability assessment of 3D wafer stacking technology. 

3D device integration allows designers to divide their circuitry into layers and take advantage of the short vertical interconnects.  Another design advantage arises by partitioning circuitry according to process requirements.  Tezzaron’s wafer stacking approach can also accommodate differing substrates, integrating Si and SiGe in a single 3D device for example.  This heterogeneous integration of substrates would be very good news for Wi-Fi, Bluetooth, and other RF devices.

Dr. Subhash Gupta, Managing Director of Tezzaron, predicts “explosive growth” in these markets, and that 3D semiconductors may be adding a third dimension to the Moore’s Law which has only been driving 2D scaling so far.

Today, Tezzaron Semiconductor is a privately held corporation with offices in Singapore and USA.  IME, with its long history of working with industries through joint development projects and consortia, is uniquely positioned to support Tezzaron in the years ahead.

Dr. Subhash Gupta (left) at the MOU signing ceremony with Prof Dim-Lee Kwong, Executive Director of IME.