Relevance of M-STEM in Semiconductor Landscape

Silicon-based semiconductor devices have evolved from micro to nano regime over the last few years. Critical dimensions within the conventional MOSFETs, such as gate length and junction depth, have shrunk to less than a few nanometers (nm) and gate dielectric thickness to nearly 1 nm. There are only a few atoms in such dimensions. Conventional boundary between a bulk and an interface has now become ambiguous and it can no longer be distinguished clearly whether the device property is controlled by the interfaces or by the bulk properties of the materials. Novel and unique nano-characterization capabilities are needed urgently not only in R&D but also in wafer process production environment. Such requirement is now met by transmission electron microscopy (TEM) technologies.

The advanced Monochromatic Scanning Transmission Electron Microscopy (M-STEM) provides imaging, diffraction and spectroscopy techniques (EDS and EELS) with the enhanced energy resolution. Its unique capability is that it accesses materials in the nanometer or even atomic scale state rather than being confined to examination of the surface, as with a scanned probe technique. Its potential applications in contemporary sub-45nm metal-oxide-semiconductor field effect transistor (MOSFET) technology nodes and beyond are crucial for the device and process R&D community.Some of these applications are presented in the following slides and videoclip.

• Click here to read more (PDF file)

• Industry Forum on Nanometer Scale Transmission Electron Microscopy for Industrial Applications