IME's Silicon Photonics Platform is based on 248 nm deep UV lithography supporting a wide range of submicron photonic devices and structures: passive structures from isolated strip waveguides to dense photonic crystal structures, active structures through Ge and SiGe epitaxial growth, and high-quality SOI as a substrate.
For technical description and guidelines for the design and fabrication of passive Silicon-on-insulator photonic circuits, read the design rules for silicon photonics MPW prototyping (PDF file - version 1)
|
